MEMS技術の紹介

1. プロセス能力

MEMS Foundry Business Start: April 1, 2004
Location Kirishima City, Kagoshima Prefecture, Japan
Clean Room
Clean rating Class 1-1000
Wafer size 6 inch
Production capacity Small volume engineering samples - mass production
Services Engineering samples, Production
ISO, etc. ISO9001, TS16949, ISO14001
Development/Production
experience
Sensor, Actuators
Process technology Bulk processing including SOI, Cavity-SOI, Surface processing, Mixed signal semiconductor processing
Equipment
Photolythography Stepper, Double sided aligner, Coater, Developer
Heat treatment/diffusion Diffusion, Ionic diffusion
Deposition LPCVD, PCVD, Sputter, Vapor deposition, Doped Poly, Epi Poly
Dry etch RIE, DeepRIE, Asher
Wet etch HF, KOH, Resist removal
Bonding Metal bonding, Glass frit bonding
Cleaning RCA, Organic cleaning
Other Plating, Lift off
LowStress SiN, LowStress Poly, LowStress Epi Si
Epi
Laser dicing (Stealth)
Design/Analysis LSI design, Analysis environment
Measurement/Evaluation LSI & MEMS measurement (Probing), Evaluation environment
Assembly/Packaging LSI assembly

2. 扱える材料

  1A 2A 3A 4A 5A 6A 7A 8 1B 2B 3B 4B 5B 6B 7B 0
  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
1 1
H
  2
He
2 3
Li
4
Be
  5
B
6
C
7
N
8
O
9
F
10
Ne
3 11
Na
12
Mg
  13
Al
14
Si
15
P
16
S
17
Cl
18
Ar
4 19
K
20
Ca
21
Sc
22
Ti
23
V
24
Cr
25
Mn
26
Fe
27
Co
28
Ni
29
Cu
30
Zn
31
Ga
32
Ge
33
As
34
Se
35
Br
36
Kr
5 37
Rb
38
Sr
39
Y
40
Zr
41
Nb
42
Mo
43
Tc
44
Ru
45
Rh
46
Pd
47
Ag
48
Cd
49
In
50
Sn
51
Sb
52
Te
53
I
54
Xe
6 55
Cs
56
Ba
  72
Hf
73
Ta
74
W
75
Re
76
Os
77
Ir
78
Pt
79
Au
80
Hg
81
Tl
82
Pb
83
Bi
84
Po
85
At
86
Rn

3. プロセス技術

TSV (Through Silicon Via)

Features
  • High aspect ratio TSV
  • High-density TSV

WLP (Wafer Level Package)

Features
  • Au - Si Eutectic Bonding
  • Vacuum Sealing
  • Au - Au Bonding
  • Glass Frit Bonding
  • Resin Bonding
Wafer bonding after dicing

Deep RIE Process

Features
  • High aspect ratios
  • Various taper angles
  • Filling
Width (Top) : 1.25 µm, Width (Bottom) : 1 µm, Depth : 21.0 µm, Taper : 90.34 degree, A/R : 18.7
Width 20 µm, Depth 220 µm
This is an example by Deep RIE process technology. A pen can be seen through the etched wafer.

Epi Poly Process

Features
  • Thick Poly-Si
  • Low-resistance Poly-Si
  • Low-stress Poly-Si