Sony has developed the approx. 2.13M effective pixel back-illuminated CMOS image sensors IMX290LQR and IMX291LQR with improved sensitivity in the visible-light and near infrared light regions for industrial applications.
A new 2.9 µm-square unit pixel has been developed that combines a back-illuminated structure with technology for improving near infrared sensitivity to further enhance picture quality at low illumination while at the same time realizing Full HD cameras for industrial applications. This realizes two or more times the sensitivity in the visible-light region and three or more times the sensitivity in the near infrared light region than that of the existing Sony product (IMX236LQJ)*1. In addition, two types of WDR (Wide Dynamic Range) technology are also provided to further improve imaging performance.
The new lineup includes the two types of the IMX290LQR, which has the DOL (Digital Overlap) -WDR function and the IMX291LQR, which does not have the DOL-WDR function.
*1: See the New Product Information released in September 2013.
* Exmor R is a trademark of Sony Corporation. The Exmor R is a Sony's CMOS image sensor with significantly enhanced imaging characteristics including sensitivity and low noise by changing fundamental structure of Exmor™ pixel adopted column parallel A/D converter to back-illuminated type.
* STARVIS is a trademark of Sony Corporation. The STARVIS is back-illuminated pixel technology used in CMOS image sensors for surveillance camera applications. It features a sensitivity of 2000 mV or more per 1 µm2 (color product, when imaging with a 706 cd/m2 light source, F5.6 in 1 s accumulation equivalent), and realizes high picture quality in the visible-light and near infrared light regions.
Good sensitivity characteristics at low illumination and in the near infrared light region are a required performance of cameras for industrial applications. These new image sensors use a back-illuminated structure and also have an expanded photodiode area, which simultaneously improve sensitivity in both light regions compared to the existing front-illuminated structure.
In addition, the new image sensors realize improved sensitivity characteristics two or more times in the visible-light region and three or more times in the near infrared light region (850 nm) compared to the existing Sony product (IMX236LQJ) with the same pixel size and increased sensitivity in the near infrared light region (Photograph 2).
The IMX290LQR supports both multiple exposure and DOL-type WDR functions. (The IMX291LQR supports only the multiple exposure-type WDR function.)
The multiple exposure-type WDR function outputs one set of two or four frames with different exposure times. In this case, the gain can also be set separately for each frame in addition to the exposure time.
The DOL-type WDR function outputs the data for up to three frames with different storage times line by line. By performing special signal processing with an ISP (Image Signal Processor) or other device at the image sensor rear-end, this enables improvement of picture quality under low illumination compared to the multiple exposure-type WDR function.
The IMX290LQR and IMX291LQR are equipped with three different types of output interface (low-voltage LVDS serial, MIPI CSI-2, CMOS parallel) to meet diverse needs. The low-voltage LVDS serial interface has a maximum output data rate of 445.5 Mbps/ch and the number of output channels can be selected from 2ch, 4ch or 8ch. The MIPI CSI-2 interface has a maximum output data rate of 891 Mbps/lane and the number of output channels can be selected from 2 lanes or 4 lanes. The CMOS parallel interface has a maximum output data rate of 74.25 Mpixels/s.
*If the mouse cursor changes over the photo, you can click to see the larger version in a new window.
Condition: 400 lx F1.4 (Full HD image, 60 frames/s)
Condition1: 0.08 lx F1.4 (Full HD image, 30 frames/s)
Condition 2: 0 lx (850 nm IR) F1.4 (Full HD image, 30 frames/s)
|Item||IMX290LQR / IMX291LQR|
|Output image size||Diagonal 6.46 mm (Type 1 / 2.8) (Full HD mode)
Diagonal 4.31 mm (Type 1 / 4.2) (HD720p mode)
|Number of effective pixels||1945 (H) × 1097 (V) approx. 2.13M pixels
1305 (H) × 729 (V) approx. 0.95M pixels
|Unit cell size||2.9 µm (H) × 2.9 µm (V)|
|Optical blacks||Horizontal||Front: 0 pixels, rear: 0 pixels|
|Vertical||Front: 10 pixels, rear: 0 pixels|
|Input drive frequency||74.25 MHz / 37.125 MHz|
|Supply voltage VDD (Typ.)||2.9 V / 1.8 V / 1.2 V|
|Sensitivity (F5.6)||Typ.||1300 mV||1/30s accumulation|
|Saturation signal||Min.||914 mV||Tj = 60 °C|
|Mode||Interface||ADC||Frame rate (Max.)||Bit rate (Max.)|
|Low voltage LVDS
serial 8 ch
|10 bits||120 frames/s||445.5 Mbps/ch|
|Low voltage LVDS
serial 8 ch
|12 bits||60 frames/s||222.75 Mbps/ch|
|CSI-2 4lane||10 bits||120 frames/s||891 Mbps/lane|
|CSI-2 4lane||12 bits||60 frames/s||445.5 Mbps/lane|
|CMOS parallel||10 bits / 12 bits||30 frames/s||74.25 Mpixel/s|
|HD720p||Low voltage LVDS
serial 4 ch
|10 bits||120 frames/s||594 Mbps/ch|
|Low voltage LVDS
serial 4 ch
|12 bits||60 frames/s||297 Mbps/ch|
|CSI-2 4lane||10 bits||120 frames/s||594 Mbps/lane|
|CSI-2 4lane||12 bits||60 frames/s||297 Mbps/lane|
|CMOS parallel||10 bits / 12 bits||60 frames/s||74.25 Mpixel/s|
*Sony reserves the right to change products and specifications without prior notice.
The IMX290LQR and IMX291LQR were created as the ultimate high-sensitivity Full HD image sensors for industrial applications, and incorporate Sony's leading image sensor technology, such as a back-illuminated structure, technology for improving near infrared sensitivity, high conversion rate pixels, and new WDR functions. We hope that you will experience the fantastic 1080p pictures captured by these high-sensitivity image sensors and be amazed by visibility that is clearly on a different level from that of existing cameras, not only under normal lighting but also in low illumination and near infrared light environments.